Method to print photoresist lines with negative sidewalls

ABSTRACT

A write pole for vertical magnetic recording is described. It includes a trapezoidal prism of high magnetic moment material, having inwardly sloping sidewalls. Its parallel surfaces are between about 0.1 and 0.3 microns apart and the sidewalls slope in the range of 15.5 to 60 degrees relative to vertical.

This application is a continuation in part of application Ser. No.11/588,574, filed on Oct. 27, 2006, which is a divisional application ofapplication Ser. No. 10/660,914, filed on Sep. 12, 2003, now patented asU.S. Pat. No. 7,132,221, both of which are herein incorporated byreference in their entirety.

FIELD OF THE INVENTION

The invention relates to the general field of electron lithography withparticular reference to controlling sidewall slope angle.

BACKGROUND OF THE INVENTION

As the critical dimension for devices drops below 100 nm, the wall angle(slope) of photoresist becomes very critical for subsequent etching,deposition, and lift off processes. The resist wall angle may vary frompositive, normal, to negative, as illustrated in FIGS. 1 a, 1 b and 1 crespectively.

Positive and normal sidewall slopes can be easily developed fromnegative-tone chemically amplified resists. However, it is nearlyimpossible to produce a negative wall angle from either negative orpositive-tone chemically amplified resists, especially by e-beamlithography. Due to electron forward scattering in the resist andbackward scattering from the substrate, a positive wall angle is usuallyformed with negative-tone chemically amplified resists. Positive e-beamresists are unable to produce a consistent wall angle and tend toexhibit resist foot necking such as 21 seen in FIG. 2.

As magnetic recording is pushed to higher areal densities, perpendicularrecording has become a serious candidate to replace longitudinalrecording. Perpendicular recording uses a magnetic yoke (surrounded byfield coil) which terminates as a single pole that is used for the writehead. This pole needs to be wide enough at one end to attach to the yokeand narrow enough at its the other end to confine the write flux to avery small area (typically measuring about 0.1 by 0.1 microns). Objectsof this type are most easily formed using micro-molding techniques.Since negative resists can be easily applied to create such molds, it isimportant to be able to control the slope of the sidewalls.

A routine search of the prior art was performed with the followingreferences of interest being found:

U.S. Pat. No. 5,310,626 (Fernandes et al) teaches using a tilt angle inphotolithography while U.S. Pat. No. 6,504,675 (Shukh et al) discloses atrapezoidal write pole. In U.S. Pat. No. 6,255,035, Minter et al.describe two photoresist layers exposed to e-beam to form negativeresist sidewalls and in U.S. Pat. No. 4,238,559, Feng et al. teach thatundercut resist profiles are easily attainable using e-beam lithography.

SUMMARY OF THE INVENTION

It has been an object of at least one embodiment of the presentinvention to provide a method for forming a photoresist pedestal whosesidewalls slope inwards.

Another object of at least one embodiment of the present invention hasbeen for said method to further allow fine tuning of the exact amount ofsaid negative slope.

Still another object of at least one embodiment of the present inventionhas been that said method be suitable for use in electron beamlithography.

A further object of at least one embodiment of the present invention hasbeen to provide a process for manufacturing a trapezoidally shaped poletip for use in a vertical magnetic writer.

These objects have been achieved by first forming a photoresist pedestalin the conventional way. This is followed by flood exposing saidpedestal with electrons followed by a second development treatment whichresults in removal of additional material from the sidewalls, saidremoval being greatest at the substrate and least at the pedestal's topsurface, resulting in negatively sloping sidewalls. Additionally, anapplication of this method to a process for forming a pole tip for avertical magnetic writer is also described.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 a, 1 b, and 1 c illustrate three possible types of sidewall inpedestals formed from photoresist.

FIG. 2 illustrates a particular problem associated with sidewalls whenusing positive e-beam resists.

FIG. 3 shows formation of a latent image in photoresist after exposureto a patterning electron beam.

FIG. 4 shows a photoresist pedestal of the prior art.

FIG. 5 illustrates a key feature of the present invention which is usedto adjust the slope of the sidewalls.

FIG. 6 shows how a pedestal having negatively sloping sidewalls may beformed.

FIG. 7 shows how sidewall slope may be fine tuned.

FIG. 8 is the starting point for a process to form a magnetic writepole.

FIGS. 9-12 show how a suitable mold for said write pole is formed.

FIGS. 13-14 illustrate how the write pole is formed in the mold.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Referring now to FIG. 3, the method of the present invention begins withthe deposition of layer of photoresist 32 on substrate 31. Forphotoresist we have preferred to use 2000 $ of NEB22A2 (a negative tonechemically amplified resist from Sumitomo Chemical). The photoresist isthen exposed to pattern generating electron beam 33 (electron dose ofbetween about 10 and 40 ______ C/cm², with about 23 ______ C/cm² beingpreferred), thereby forming in the photoresist latent image 34 in theshape of a rectangular prism. This is followed by a baking treatment(heating to a temperature between about 80 and 120% C for between about1 and 4 minutes, with about 100° C. for 2 minutes being preferred) whichin turn is followed by a first development treatment (immersion in aTMAH solution having a concentration between about 1 and 3% for betweenabout 10 and 60 seconds, with about 1.79% TMAH for 13 seconds beingpreferred), selected for the achievement of optimum resolution. Thisresults in the formation of photoresist pedestal 41, as seen in FIG. 4.

Now follows a key feature of the invention. As shown in FIG. 5, pedestal41 is exposed to flooded electron beam 51 a. The latter is generated byraster and/or vector scan. In a first embodiment of the invention,flooded beam 51 a is vertically applied to provide an electron dose ofbetween about 10 and 40° C./cm², with about 26° C./cm² being preferred.Some electrons, when bombarding the resist, will escape from the resistsidewall but fewer electrons will travel all the way to the bottom.Consequently, more acid will be released from the top and the center ofthe resist pedestal than from the bottom, resulting in a higher degreeof cross-linking closer to the top and further from the bottom.Therefore, the lower sections of the resist pedestal have the potentialto be preferentially dissolved in a suitable solvent.

Accordingly, a second baking treatment (heating to a temperature betweenabout 80 and 120% C for up to 5 minutes, with about 100° C. for 2minutes being preferred) is given, followed by a second developmenttreatment, a key feature being that a more concentrated developer isused this time (immersion in a TMAH solution having a concentrationbetween about 1 and 3% for between about 10 and 60 seconds, with about2.38% TMAH for 60 seconds being preferred), causing sidewalls 61 toslope inwards (at an angle of between about 15 and 90 degrees fromvertical, with a slope in the range of 15.5 to 60 degrees beingpreferred) so that the pedestal is widest at its top surface andnarrowest at the substrate. This is illustrated in FIG. 6.

In a second embodiment of the invention, the flooded electron beam isapplied at an angle relative to the vertical. This is illustrated asbeam 51 b in FIG. 7. Angular exposure of this type leads to a longertraveling path for electrons to escape from the resist sidewall. This,in turn, magnifies the difference in the degree of cross-linking betweenthe top and the bottom sections of the resist pedestal, forming a morenegatively sloping sidewall as illustrated in FIG. 8.

An important advantage of the second embodiment is that it enables theextent of negative sidewall slope to be tunable—the greater the beamtilt, the more negative the sidewall slope.

We have applied the above method to the development of a process formanufacturing a trapezoid-shaped write pole for the use in perpendicularmagnetic recording. This process begins with the formation of aphotoresist pedestal with negatively sloping sidewalls as just describedabove and shown as trapezoidal pedestal 41 in FIG. 8. Typically, thislayer of photoresist is deposited to a thickness between about 0.1 and0.3 microns.

A conformal coating of non-magnetic material 91 (such as aluminum oxideor silicon oxide) is then deposited to a thickness that is sufficient tofully enclose said trapezoidal prism (typically between about 0.1 and0.3 microns) as shown in FIG. 9. The preferred deposition method of thisstep is atomic-layer chemical vapor deposition which is a process ofdepositing successive layers of very thin films, each of which isallowed to react with an appropriate gas before the latter is removedand a fresh thin film layer deposited. The method provides high purityfilms having well-controlled stoichiometry. This is then planarizeduntil top surface 95 of prism 41 is just exposed, as shown in FIG. 10,followed by the removal of all photoresist, thereby forming mold 45, asseen in FIG. 11, All exposed surfaces, including mold 45, are thencoated with seed layer 92, as seen in FIG. 12. Examples of materialssuitable for the seed layer include, but are not limited to, CoNiFe,NiFe, CoFe, and CoFeN, and it is deposited to a thickness between about100 and 500 Angstroms. This is followed by deposition, onto the seedlayer, of layer 93 of a material having high magnetic permeability, to athickness sufficient to overfill the mold, as seen in FIG. 13. Suitablematerials for layer 93 include, but are not limited to, CoNiFe, NiFe,and CoFe, all of them having a saturation moment of at least 2.1 Tesla(or 21 kG).

The process concludes with planarizing until seed layer 92 has been justremoved (except inside the mold itself, resulting in the formation ofwrite pole 93.

1. A write pole for vertical magnetic recording, comprising: atrapezoidal prism of high magnetic moment material; said trapezoidalprism having parallel top and bottom surfaces and inwardly slopingsidewalls; said parallel surfaces being a distance of between about 0.1and 0.3 microns apart; and said sidewalls having a slope, relative tovertical, in the range of 15.5 to 60 degrees.
 2. The write poledescribed in claim 1 wherein said high magnetic moment layer is selectedfrom the group consisting of CoFe, NiFe, CoNiFe, and CoFeX, where X isW, Mn, Ni, Mo, Ti, Nb, V, Cr, or C.
 3. The write pole described in claim1 wherein said high magnetic moment material has a saturation moment ofat least 21 kilogauss.
 4. The write pole described in claim 1 whereinthe bottom surface has linear dimensions less than about 0.1 by 0.1microns.